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3DD13002B High Power Transistor Circuit VCEO 400V Low Saturation Voltage

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3DD13002B High Power Transistor Circuit VCEO 400V Low Saturation Voltage

Place of Origin : ShenZhen China

Brand Name : Hua Xuan Yang

Certification : RoHS、SGS

MOQ : 1000-2000 PCS

Price : Negotiated

Packaging Details : Boxed

Delivery Time : 1 - 2 Weeks

Payment Terms : L/C T/T Western Union

Supply Ability : 18,000,000PCS / Per Day

Model Number : 3DD13002B

VCBO : 600V

VCEO : 400V

Collector-Base Voltage : 6V

Product name : semiconductor triode type

Power mosfet transistor : TO-92 Plastic-Encapsulate

Type : Triode Transistor

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TO-92 Plastic-Encapsulate Transistors 3DD13002B TRANSISTOR (NPN)

FEATURE

Power Switching Applications

MARKING

13002B=Device code

Solid dot=Green molding compound device, if none,the normal device

XXX=Code

3DD13002B High Power Transistor Circuit VCEO 400V Low Saturation Voltage

ORDERING INFORMATION

Part Number Package Packing Method Pack Quantity
3DD13002B TO-92 Bulk 1000pcs/Bag
3DD13002B-TA TO-92 Tape 2000pcs/Box


MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)

Symbol Parameter Value Unit
VCBO Collector-Base Voltage 600 V
VCEO Collector-Emitter Voltage 400 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 0.8 A
PC Collector Power Dissipation 0.9 W
TJ Junction Temperature 150 ℃
Tstg Storage Temperature -55 ~ 150 ℃


ELECTRICAL CHARACTERISTICS

Ta=25 Š unless otherwise specified


3DD13002B High Power Transistor Circuit VCEO 400V Low Saturation Voltage

Parameter

 Symbol Test conditions Min Typ Max

3DD13002B High Power Transistor Circuit VCEO 400V Low Saturation Voltage

Unit
Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 600 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 400 V
Emitter-base breakdown voltage V(BR)EBO IE= 100μA,IC=0 6 V

Collector cut-off current

 ICBO VCB= 600V,IE=0 100 µA
ICEO VCE= 400V,IB=0 100 µA
Emitter cut-off current IEBO VEB= 6 V, IC=0 100 µA

Dc c urrent gain

 hFE1 VCE= 10 V, IC=200mA 9 40
hFE2 VCE= 10 V, IC=0.25mA 5
Collector-emitter saturation voltage VCE(sat) IC=200mA, IB=40mA 0.5 V
Base-emitter saturation voltage VBE(sat) IC=200mA, IB=40mA 1.1 V

Transition frequency

fT

VCE=10V, IC=100mA

f =1MHz

5

MHz
Fall time tf

IC=1A, IB1=-IB2=0.2A VCC=100V

 0.5 µs
Storage time ts 2.5 µs


CLASSIFICATION OF hFE(2)

Range 9-15 15-20 20-25 25-30 30-35 35-40

Typical Characteristics

3DD13002B High Power Transistor Circuit VCEO 400V Low Saturation Voltage3DD13002B High Power Transistor Circuit VCEO 400V Low Saturation Voltage3DD13002B High Power Transistor Circuit VCEO 400V Low Saturation Voltage3DD13002B High Power Transistor Circuit VCEO 400V Low Saturation Voltage

TO-92 Package Outline Dimensions

Symbol Dimensions In Millimeters Dimensions In Inches
Min Max Min Max
A 3.300 3.700 0.130 0.146
A1 1.100 1.400 0.043 0.055
b 0.380 0.550 0.015 0.022
c 0.360 0.510 0.014 0.020
D 4.300 4.700 0.169 0.185
D1 3.430 0.135
E 4.300 4.700 0.169 0.185
e 1.270 TYP 0.050 TYP
e1 2.440 2.640 0.096 0.104
L 14.100 14.500 0.555 0.571
Φ 1.600 0.063
h 0.000 0.380 0.000 0.015


Product Tags:

tip series transistors

      

high power pnp transistor

      
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